STG3P2M10N60B
STMicroelectronics
STMicroelectronics
IGBT MOD 600V 19A 56W SEMITOP2
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STMicroelectronics's STG3P2M10N60B represents the cutting edge in Transistors - IGBTs - Modules technology. This discrete semiconductor product delivers superior power control with its optimized gate-drive characteristics and short-circuit ruggedness. The module's innovative design features include an advanced NPT trench construction and low inductance package. Primary applications include traction systems, induction heating, and high-frequency power supplies. A typical use case would be implementing the STG3P2M10N60B in industrial servo drives or medium-voltage frequency converters. Trust STMicroelectronics's expertise in IGBT modules for energy-efficient power management solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 19 A
- Power - Max: 56 W
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 7A
- Current - Collector Cutoff (Max): 10 µA
- Input Capacitance (Cies) @ Vce: 720 pF @ 25 V
- Input: Single Phase Bridge Rectifier
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SEMITOP®2
- Supplier Device Package: SEMITOP®2
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