STGW30M65DF2
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT M SE
$3.55
Available to order
Reference Price (USD)
1+
$3.75000
30+
$3.01700
120+
$2.74883
510+
$2.22590
1,020+
$1.87726
2,520+
$1.78340
5,010+
$1.71635
Exquisite packaging
Discount
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Discover the STGW30M65DF2 Single IGBT transistor by STMicroelectronics, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the STGW30M65DF2 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the STGW30M65DF2 for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
- Power - Max: 258 W
- Switching Energy: 300µJ (on), 960µJ (off)
- Input Type: Standard
- Gate Charge: 80 nC
- Td (on/off) @ 25°C: 31.6ns/115ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): 140 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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