STGW50H65DFB2-4
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP, 650 V, 5
$5.78
Available to order
Reference Price (USD)
1+
$5.78000
500+
$5.7222
1000+
$5.6644
1500+
$5.6066
2000+
$5.5488
2500+
$5.491
Exquisite packaging
Discount
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The STGW50H65DFB2-4 Single IGBT transistor by STMicroelectronics is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the STGW50H65DFB2-4 provides consistent performance in varied conditions. Rely on STMicroelectronics's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 86 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
- Power - Max: 272 W
- Switching Energy: 629µJ (on), 478µJ (off)
- Input Type: Standard
- Gate Charge: 151 nC
- Td (on/off) @ 25°C: 18ns/128ns
- Test Condition: 400V, 50A, 12Ohm, 15V
- Reverse Recovery Time (trr): 92 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: TO-247-4
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