IHW40N135R5XKSA1
Infineon Technologies
Infineon Technologies
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$5.14
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Reference Price (USD)
240+
$3.92179
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Enhance your electronic projects with the IHW40N135R5XKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IHW40N135R5XKSA1 ensures precision and reliability. Infineon Technologies's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IHW40N135R5XKSA1 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1350 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 40A
- Power - Max: 394 W
- Switching Energy: 2mJ (off)
- Input Type: Standard
- Gate Charge: 305 nC
- Td (on/off) @ 25°C: -/410ns
- Test Condition: 600V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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