APT100GN60LDQ4G
Microchip Technology
Microchip Technology
IGBT 600V 229A 625W TO264
$14.95
Available to order
Reference Price (USD)
1+
$15.86000
10+
$14.41600
25+
$13.33440
100+
$12.25330
250+
$11.17212
500+
$10.45136
1,000+
$9.61044
Exquisite packaging
Discount
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Upgrade your power management systems with the APT100GN60LDQ4G Single IGBT transistor from Microchip Technology. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the APT100GN60LDQ4G provides reliable and efficient operation. Microchip Technology's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose APT100GN60LDQ4G for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 229 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 100A
- Power - Max: 625 W
- Switching Energy: 4.75mJ (on), 2.675mJ (off)
- Input Type: Standard
- Gate Charge: 600 nC
- Td (on/off) @ 25°C: 31ns/310ns
- Test Condition: 400V, 100A, 1Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: TO-264 [L]
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