IHW20N120R5XKSA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 40A TO247-3
$3.67
Available to order
Reference Price (USD)
1+
$4.06000
10+
$3.67700
240+
$3.05908
720+
$2.64279
1,200+
$2.26955
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IHW20N120R5XKSA1 by Infineon Technologies is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the IHW20N120R5XKSA1 delivers robust performance. Infineon Technologies's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate IHW20N120R5XKSA1 into your designs for optimal power control.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 20A
- Power - Max: 288 W
- Switching Energy: 750µJ (off)
- Input Type: Standard
- Gate Charge: 170 nC
- Td (on/off) @ 25°C: -/260ns
- Test Condition: 600V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
Related Products
onsemi
ISL9V3036D3STV
Infineon Technologies
IKW40N60H3FKSA1
onsemi
NGTB40N65IHL2WG
IXYS
IXXH40N65B4
Microchip Technology
APT20GN60SDQ2G
Infineon Technologies
IRGP4062D-EPBF
STMicroelectronics
STGY80H65DFB
IXYS
IXGA48N60B3-TRL
STMicroelectronics
STGF20H65DFB2
IXYS