STGY80H65DFB
STMicroelectronics
STMicroelectronics
IGBT 650V 120A 469W MAX247
$14.45
Available to order
Reference Price (USD)
1+
$15.54000
30+
$13.83967
120+
$12.34075
510+
$11.11412
1,020+
$10.31910
Exquisite packaging
Discount
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Enhance your electronic projects with the STGY80H65DFB Single IGBT transistor from STMicroelectronics. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the STGY80H65DFB ensures precision and reliability. STMicroelectronics's cutting-edge technology guarantees a component that meets the highest industry standards. Choose STGY80H65DFB for efficient and durable power solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
- Power - Max: 469 W
- Switching Energy: 2.1mJ (on), 1.5mJ (off)
- Input Type: Standard
- Gate Charge: 414 nC
- Td (on/off) @ 25°C: 84ns/280ns
- Test Condition: 400V, 80A, 10Ohm, 15V
- Reverse Recovery Time (trr): 85 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: MAX247™
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