IGZ50N65H5XKSA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH 650V 85A TO247-4
$4.15
Available to order
Reference Price (USD)
240+
$4.32058
Exquisite packaging
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The IGZ50N65H5XKSA1 by Infineon Technologies is a premium Single IGBT transistor designed for high-power applications. Part of the Discrete Semiconductor Products family, it features fast switching speeds and high input impedance, reducing power loss and improving efficiency. Commonly used in motor control, power supplies, and renewable energy inverters, this IGBT is built to withstand harsh environments. With Infineon Technologies's reputation for quality, the IGZ50N65H5XKSA1 is a dependable choice for demanding electronic designs.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 85 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Power - Max: 273 W
- Switching Energy: 410µJ (on), 190µJ (off)
- Input Type: Standard
- Gate Charge: 109 nC
- Td (on/off) @ 25°C: 20ns/250ns
- Test Condition: 400V, 25A, 12Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: PG-TO247-4
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