NGTB40N65IHL2WG
onsemi
onsemi
IGBT TRENCH/FS 650V 80A TO247-3
$4.58
Available to order
Reference Price (USD)
1+
$4.97000
30+
$4.24267
120+
$3.69783
510+
$3.17110
1,020+
$2.69879
Exquisite packaging
Discount
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The NGTB40N65IHL2WG from onsemi is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose NGTB40N65IHL2WG for superior performance in your next power electronics project.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
- Power - Max: 300 W
- Switching Energy: 360µJ (off)
- Input Type: Standard
- Gate Charge: 135 nC
- Td (on/off) @ 25°C: -/140ns
- Test Condition: 400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 465 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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