IXXH40N65B4
IXYS
IXYS
IGBT 650V 120A 455W TO247AD
$4.83
Available to order
Reference Price (USD)
30+
$4.37067
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the IXXH40N65B4 Single IGBT transistor by IXYS, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IXXH40N65B4 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IXXH40N65B4 for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
- Power - Max: 455 W
- Switching Energy: 1.4mJ (on), 560µJ (off)
- Input Type: Standard
- Gate Charge: 77 nC
- Td (on/off) @ 25°C: 28ns/144ns
- Test Condition: 400V, 40A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXXH)
Related Products
Microchip Technology
APT20GN60SDQ2G
Infineon Technologies
IRGP4062D-EPBF
STMicroelectronics
STGY80H65DFB
IXYS
IXGA48N60B3-TRL
STMicroelectronics
STGF20H65DFB2
IXYS
IXGA20N120B3
Microchip Technology
APT43GA90B
Infineon Technologies
IRGS8B60KPBF
STMicroelectronics
STGWA20M65DF2
Infineon Technologies