DGTD65T40S2PT
Diodes Incorporated
Diodes Incorporated
IGBT 600V-X TO247 TUBE 0.45K
$2.31
Available to order
Reference Price (USD)
450+
$2.67813
Exquisite packaging
Discount
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Optimize your power systems with the DGTD65T40S2PT Single IGBT transistor from Diodes Incorporated. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the DGTD65T40S2PT delivers consistent and reliable operation. Trust Diodes Incorporated's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Last Time Buy
- IGBT Type: Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
- Power - Max: 230 W
- Switching Energy: 500µJ (on), 400µJ (off)
- Input Type: Standard
- Gate Charge: 60 nC
- Td (on/off) @ 25°C: 6ns/55ns
- Test Condition: 400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 60 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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