IXYB82N120C3H1
IXYS
IXYS
IGBT 1200V 164A 1040W PLUS264
$29.05
Available to order
Reference Price (USD)
1+
$22.41000
10+
$20.72600
25+
$19.04600
100+
$17.70150
250+
$16.24508
500+
$15.46084
Exquisite packaging
Discount
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Enhance your electronic projects with the IXYB82N120C3H1 Single IGBT transistor from IXYS. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IXYB82N120C3H1 ensures precision and reliability. IXYS's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IXYB82N120C3H1 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 164 A
- Current - Collector Pulsed (Icm): 320 A
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
- Power - Max: 1040 W
- Switching Energy: 4.95mJ (on), 2.78mJ (off)
- Input Type: Standard
- Gate Charge: 215 nC
- Td (on/off) @ 25°C: 29ns/192ns
- Test Condition: 600V, 80A, 2Ohm, 15V
- Reverse Recovery Time (trr): 420 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: PLUS264™
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