STGW8M120DF3
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT M SE
$4.70
Available to order
Reference Price (USD)
1+
$4.09000
30+
$3.33133
120+
$3.05625
510+
$2.52002
1,020+
$2.16250
2,520+
$2.06625
5,010+
$1.99750
Exquisite packaging
Discount
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The STGW8M120DF3 by STMicroelectronics is a premium Single IGBT transistor designed for high-power applications. Part of the Discrete Semiconductor Products family, it features fast switching speeds and high input impedance, reducing power loss and improving efficiency. Commonly used in motor control, power supplies, and renewable energy inverters, this IGBT is built to withstand harsh environments. With STMicroelectronics's reputation for quality, the STGW8M120DF3 is a dependable choice for demanding electronic designs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 16 A
- Current - Collector Pulsed (Icm): 32 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 8A
- Power - Max: 167 W
- Switching Energy: 390µJ (on), 370µJ (Off)
- Input Type: Standard
- Gate Charge: 32 nC
- Td (on/off) @ 25°C: 20ns/126ns
- Test Condition: 600V, 8A, 33Ohm, 15V
- Reverse Recovery Time (trr): 103 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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