STGWA60NC60WDR
STMicroelectronics
STMicroelectronics
IGBT 600V 130A 340W TO247
$7.97
Available to order
Reference Price (USD)
1+
$8.37000
30+
$7.21100
120+
$6.26117
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The STGWA60NC60WDR Single IGBT transistor by STMicroelectronics is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The STGWA60NC60WDR ensures precise power control and long-term stability. With STMicroelectronics's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate STGWA60NC60WDR into your projects for superior results.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 130 A
- Current - Collector Pulsed (Icm): 250 A
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
- Power - Max: 340 W
- Switching Energy: 743µJ (on), 560µJ (off)
- Input Type: Standard
- Gate Charge: 195 nC
- Td (on/off) @ 25°C: 40ns/240ns
- Test Condition: 390V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 42 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 Long Leads
Related Products
Rohm Semiconductor
RGCL80TS60GC11
Alpha & Omega Semiconductor Inc.
AOB10B65M1
Infineon Technologies
AIKW40N65DF5XKSA1
STMicroelectronics
STGW8M120DF3
onsemi
NGTB40N120IHRWG
STMicroelectronics
STGF19NC60WD
Infineon Technologies
AIGB30N65F5ATMA1
STMicroelectronics
STGD7NC60HT4
Infineon Technologies
AUIRG4PH50S
Infineon Technologies