STGWT60H65FB
STMicroelectronics
STMicroelectronics
IGBT 650V 80A 375W TO3P-3L
$5.23
Available to order
Reference Price (USD)
1+
$5.57000
30+
$4.72500
120+
$4.09500
510+
$3.48600
1,020+
$2.94000
2,520+
$2.80000
Exquisite packaging
Discount
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The STGWT60H65FB Single IGBT transistor by STMicroelectronics is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The STGWT60H65FB ensures precise power control and long-term stability. With STMicroelectronics's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate STGWT60H65FB into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
- Power - Max: 375 W
- Switching Energy: 1.09mJ (on), 626µJ (off)
- Input Type: Standard
- Gate Charge: 306 nC
- Td (on/off) @ 25°C: 51ns/160ns
- Test Condition: 400V, 60A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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