IXXH50N60C3D1
IXYS
IXYS
IGBT 600V 100A 600W TO247AD
$12.53
Available to order
Reference Price (USD)
1+
$11.10000
10+
$9.99300
30+
$9.10500
120+
$8.21675
270+
$7.55056
510+
$6.88433
1,020+
$5.99603
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXXH50N60C3D1 Single IGBT transistor by IXYS is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The IXXH50N60C3D1 ensures precise power control and long-term stability. With IXYS's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate IXXH50N60C3D1 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
- Power - Max: 600 W
- Switching Energy: 720µJ (on), 330µJ (off)
- Input Type: Standard
- Gate Charge: 64 nC
- Td (on/off) @ 25°C: 24ns/62ns
- Test Condition: 360V, 36A, 5Ohm, 15V
- Reverse Recovery Time (trr): 25 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXXH)
Related Products
Infineon Technologies
IGP20N65H5XKSA1
STMicroelectronics
STGW30M65DF2
IXYS
IXYT55N120A4HV
Infineon Technologies
IRG4PC40SPBF
Rohm Semiconductor
RGT16TM65DGC9
onsemi
NGTB45N60S1WG
Infineon Technologies
IKP20N60H3XKSA1
Infineon Technologies
IGU04N60TAKMA1
Rohm Semiconductor
RGT60TS65DGC13
Infineon Technologies