IXGP28N60A3
IXYS
IXYS
IGBT
$3.31
Available to order
Reference Price (USD)
1+
$3.68000
10+
$3.28100
50+
$2.95320
100+
$2.69060
250+
$2.42812
500+
$2.17876
1,000+
$1.83750
2,500+
$1.75000
Exquisite packaging
Discount
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Optimize your power systems with the IXGP28N60A3 Single IGBT transistor from IXYS. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IXGP28N60A3 delivers consistent and reliable operation. Trust IXYS's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 75 A
- Current - Collector Pulsed (Icm): 170 A
- Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 24A
- Power - Max: 190 W
- Switching Energy: 700µJ (on), 2.4mJ (off)
- Input Type: Standard
- Gate Charge: 66 nC
- Td (on/off) @ 25°C: 18ns/300ns
- Test Condition: 480V, 24A, 10Ohm, 15V
- Reverse Recovery Time (trr): 26 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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