Shopping cart

Subtotal: $0.00

STW3N170

STMicroelectronics
STW3N170 Preview
STMicroelectronics
MOSFET N-CH 1700V 2.6A TO247-3
$5.87
Available to order
Reference Price (USD)
1+
$5.18000
30+
$4.22400
120+
$3.87533
510+
$3.19537
1,020+
$2.74205
2,520+
$2.62000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1700 V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 13Ohm @ 1.3A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 160mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3

Related Products

Infineon Technologies

IPU60R3K4CEAKMA1

Fairchild Semiconductor

FDD8796

Nexperia USA Inc.

2N7002,215

Renesas Electronics America Inc

RJK0391DPA-00#J5A

Micro Commercial Co

MCG20P03-TP

Infineon Technologies

IPW65R190E6

Rohm Semiconductor

RK7002BMHZGT116

Renesas Electronics America Inc

2SK1620L-E

Diodes Incorporated

DMN2075UDW-7

Top