FCB125N65S3
onsemi
onsemi
MOSFET N-CH 650V 24A TO263
$3.25
Available to order
Reference Price (USD)
1+
$3.25000
500+
$3.2175
1000+
$3.185
1500+
$3.1525
2000+
$3.12
2500+
$3.0875
Exquisite packaging
Discount
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Optimize your power electronics with the FCB125N65S3 single MOSFET from onsemi. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the FCB125N65S3 combines cutting-edge technology with onsemi's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 590µA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 181W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK-3 (TO-263-3)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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