TJ80S04M3L,LXHQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH 40V 80A DPAK
$1.73
Available to order
Reference Price (USD)
1+
$1.73000
500+
$1.7127
1000+
$1.6954
1500+
$1.6781
2000+
$1.6608
2500+
$1.6435
Exquisite packaging
Discount
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The TJ80S04M3L,LXHQ by Toshiba Semiconductor and Storage is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Toshiba Semiconductor and Storage for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 5.2mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
- Vgs (Max): +10V, -20V
- Input Capacitance (Ciss) (Max) @ Vds: 7770 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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