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TK1K7A60F,S4X

Toshiba Semiconductor and Storage
TK1K7A60F,S4X Preview
Toshiba Semiconductor and Storage
X35 PB-F POWER MOSFET TRANSISTOR
$0.94
Available to order
Reference Price (USD)
1+
$0.94000
500+
$0.9306
1000+
$0.9212
1500+
$0.9118
2000+
$0.9024
2500+
$0.893
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.7Ohm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 460µA
  • Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 300 V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack

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