TK3R2A08QM,S4X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
UMOS10 TO-220SIS 80V 3.2MOHM
$2.27
Available to order
Reference Price (USD)
1+
$2.27000
500+
$2.2473
1000+
$2.2246
1500+
$2.2019
2000+
$2.1792
2500+
$2.1565
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the TK3R2A08QM,S4X by Toshiba Semiconductor and Storage, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the TK3R2A08QM,S4X is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 3.2mOhm @ 46A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1.3mA
- Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
Related Products
Diodes Incorporated
DMP3028LPSW-13
onsemi
NTHL040N120SC1
Fairchild Semiconductor
FDP3205
Texas Instruments
CSD25310Q2
onsemi
FQT1N80TF-WS
STMicroelectronics
STL8N10F7
Vishay Siliconix
IRF610STRLPBF
Infineon Technologies
IRF1018ESTRLPBF
onsemi
FDP18N20F
onsemi