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TK3R3A06PL,S4X

Toshiba Semiconductor and Storage
TK3R3A06PL,S4X Preview
Toshiba Semiconductor and Storage
X35 PB-F POWER MOSFET TRANSISTOR
$1.88
Available to order
Reference Price (USD)
1+
$1.88000
500+
$1.8612
1000+
$1.8424
1500+
$1.8236
2000+
$1.8048
2500+
$1.786
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 40A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 700µA
  • Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 30 V
  • FET Feature: -
  • Power Dissipation (Max): 42W (Tc)
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack

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