TK8R2A06PL,S4X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 50A TO220SIS
$1.07
Available to order
Reference Price (USD)
1+
$1.59000
50+
$1.26840
100+
$1.10990
500+
$0.86070
1,000+
$0.67950
2,500+
$0.63420
Exquisite packaging
Discount
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The TK8R2A06PL,S4X by Toshiba Semiconductor and Storage is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the TK8R2A06PL,S4X is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8A, 4.5V
- Vgs(th) (Max) @ Id: 2.5V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 36W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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