TPC8208(TE12L,Q,M)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET 2N-CH 20V 5A SOP8
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose the TPC8208(TE12L,Q,M) from Toshiba Semiconductor and Storage for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the TPC8208(TE12L,Q,M) stands out for its reliability and efficiency. Toshiba Semiconductor and Storage's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5A
- Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4V
- Vgs(th) (Max) @ Id: 1.2V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V
- Power - Max: 450mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
- Supplier Device Package: 8-SOP (5.5x6.0)
Related Products
onsemi
2SK3614-TD-E
onsemi
NTJD2152PT2G
Panasonic Electronic Components
MTMC8E2A0LBF
onsemi
EFC6602R-TR
Diodes Incorporated
ZDM4306NTC
Infineon Technologies
IRF7314PBF
Toshiba Semiconductor and Storage
TPCF8402(TE85L,F,M
Diodes Incorporated
DMC3018LSD-13
EPC
EPC2104ENGRT
Infineon Technologies