TPH3206PS
Transphorm
Transphorm
GANFET N-CH 600V 17A TO220AB
$10.37
Available to order
Reference Price (USD)
1+
$9.90000
10+
$8.91000
25+
$8.11800
100+
$7.32600
300+
$6.73200
600+
$6.13800
1,200+
$5.54400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the TPH3206PS single MOSFET from Transphorm. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the TPH3206PS combines cutting-edge technology with Transphorm's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 8V
- Vgs(th) (Max) @ Id: 2.6V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
- Vgs (Max): ±18V
- Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Diodes Incorporated
ZVP2106GTA
onsemi
FQD4P25TM-WS
Rohm Semiconductor
RCX120N20
Renesas Electronics America Inc
2SJ243-T1-A
Fairchild Semiconductor
FQPF9N25CT
STMicroelectronics
STP12NM50FP
onsemi
NTMFS4H02NFT3G
Toshiba Semiconductor and Storage
TK10A80E,S4X
Rectron USA
RM8N650IP
Vishay Siliconix