ZVP2106GTA
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 60V 450MA SOT223
$1.14
Available to order
Reference Price (USD)
1,000+
$0.55500
2,000+
$0.52200
5,000+
$0.49890
10,000+
$0.48240
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The ZVP2106GTA from Diodes Incorporated redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the ZVP2106GTA offers the precision and reliability you need. Trust Diodes Incorporated to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 18 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223-3
- Package / Case: TO-261-4, TO-261AA
Related Products
onsemi
FQD4P25TM-WS
Rohm Semiconductor
RCX120N20
Renesas Electronics America Inc
2SJ243-T1-A
Fairchild Semiconductor
FQPF9N25CT
STMicroelectronics
STP12NM50FP
onsemi
NTMFS4H02NFT3G
Toshiba Semiconductor and Storage
TK10A80E,S4X
Rectron USA
RM8N650IP
Vishay Siliconix
SIHF9Z24STRR-GE3
Alpha & Omega Semiconductor Inc.