TSM052NB03CR RLG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CH 30V 17A/90A 8PDFN
$0.81
Available to order
Reference Price (USD)
1+
$0.81240
500+
$0.804276
1000+
$0.796152
1500+
$0.788028
2000+
$0.779904
2500+
$0.77178
Exquisite packaging
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Discover the TSM052NB03CR RLG from Taiwan Semiconductor Corporation, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the TSM052NB03CR RLG ensures reliable performance in demanding environments. Upgrade your circuit designs with Taiwan Semiconductor Corporation's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5.2mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2294 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PDFN (5x6)
- Package / Case: 8-PowerTDFN
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