TSM250NB06LDCR RLG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
DUAL N-CHANNEL POWER MOSFET 60V,
$1.26
Available to order
Reference Price (USD)
1+
$1.25880
500+
$1.246212
1000+
$1.233624
1500+
$1.221036
2000+
$1.208448
2500+
$1.19586
Exquisite packaging
Discount
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Choose the TSM250NB06LDCR RLG from Taiwan Semiconductor Corporation for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the TSM250NB06LDCR RLG stands out for its reliability and efficiency. Taiwan Semiconductor Corporation's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 29A (Tc)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 30V
- Power - Max: 2W (Ta), 48W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-PDFN (5x6)
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