TSM60NB190CM2 RNG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CH 600V 18A TO263
$4.76
Available to order
Reference Price (USD)
800+
$1.49010
1,600+
$1.36749
2,400+
$1.32034
Exquisite packaging
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Discover the TSM60NB190CM2 RNG from Taiwan Semiconductor Corporation, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the TSM60NB190CM2 RNG ensures reliable performance in demanding environments. Upgrade your circuit designs with Taiwan Semiconductor Corporation's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1273 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 150.6W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D²Pak)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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