TSM60NB900CH C5G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 600V 4A TO251
$3.04
Available to order
Reference Price (USD)
1+
$1.09000
10+
$0.97000
100+
$0.76640
500+
$0.59432
1,875+
$0.46920
3,750+
$0.43792
Exquisite packaging
Discount
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Enhance your electronic projects with the TSM60NB900CH C5G single MOSFET from Taiwan Semiconductor Corporation. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Taiwan Semiconductor Corporation's TSM60NB900CH C5G for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 900mOhm @ 1.2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 36.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251 (IPAK)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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