TSM6502CR RLG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N/P-CH 60V 24A/18A 8PDFN
$2.48
Available to order
Reference Price (USD)
2,500+
$0.26825
5,000+
$0.25900
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic projects with the TSM6502CR RLG from Taiwan Semiconductor Corporation, a leading option in the Discrete Semiconductor Products market. As a Transistors - FETs, MOSFETs - Arrays device, it provides fast switching speeds and low conduction losses, essential for high-efficiency applications. Ideal for use in server power supplies, battery management systems, and RF amplifiers, the TSM6502CR RLG ensures top-notch performance. Taiwan Semiconductor Corporation's expertise in semiconductor technology guarantees a product you can rely on.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc)
- Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V
- Power - Max: 40W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-PDFN (5x6)
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