UF3C065080B7S
UnitedSiC
UnitedSiC
SICFET N-CH 650V 27A D2PAK-7
$9.63
Available to order
Reference Price (USD)
1+
$9.63000
500+
$9.5337
1000+
$9.4374
1500+
$9.3411
2000+
$9.2448
2500+
$9.1485
Exquisite packaging
Discount
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Meet the UF3C065080B7S by UnitedSiC, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The UF3C065080B7S stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose UnitedSiC.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Cascode SiCJFET)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 12V
- Vgs(th) (Max) @ Id: 6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 12 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 136.4W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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