VMO580-02F
IXYS
IXYS
MOSFET N-CH 200V 580A Y3-LI
$169.40
Available to order
Reference Price (USD)
1+
$133.09000
10+
$124.39600
25+
$120.04640
Exquisite packaging
Discount
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Meet the VMO580-02F by IXYS, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The VMO580-02F stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose IXYS.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 580A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.8mOhm @ 430A, 10V
- Vgs(th) (Max) @ Id: 4V @ 50mA
- Gate Charge (Qg) (Max) @ Vgs: 2750 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: Y3-Li
- Package / Case: Y3-Li
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