ZXMN10A08E6TC
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 100V 1.5A SOT26
$0.26
Available to order
Reference Price (USD)
1+
$0.26310
500+
$0.260469
1000+
$0.257838
1500+
$0.255207
2000+
$0.252576
2500+
$0.249945
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the ZXMN10A08E6TC by Diodes Incorporated, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The ZXMN10A08E6TC stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Diodes Incorporated.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-26
- Package / Case: SOT-23-6
Related Products
Infineon Technologies
AUIRF1405ZSTRL
IXYS
IXFT60N60X3HV
Toshiba Semiconductor and Storage
TK8A45D(STA4,Q,M)
STMicroelectronics
STL8N6LF6AG
Diodes Incorporated
DMP610DLQ-7
onsemi
FDN5632N-F085
Vishay Siliconix
SIHB12N65E-GE3
onsemi
FDMS7698
Vishay Siliconix
SI2342DS-T1-BE3
onsemi