ZXMP10A17E6QTA
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 100V 1.3A SOT26
$0.91
Available to order
Reference Price (USD)
3,000+
$0.37695
6,000+
$0.35385
15,000+
$0.34230
30,000+
$0.33600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the ZXMP10A17E6QTA single MOSFET from Diodes Incorporated. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the ZXMP10A17E6QTA combines cutting-edge technology with Diodes Incorporated's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 350mOhm @ 1.4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-26
- Package / Case: SOT-23-6
Related Products
Infineon Technologies
BSZ900N20NS3GATMA1
Infineon Technologies
SPD50N03S2L-06
Infineon Technologies
IAUA180N04S5N012AUMA1
Diodes Incorporated
DMP1005UFDF-13
onsemi
NVMFS5C677NLWFT1G
NXP USA Inc.
PMPB20UN,115
Fairchild Semiconductor
FQB5N40TM
onsemi
FDBL86066-F085
Rohm Semiconductor
R6524ENJTL
Toshiba Semiconductor and Storage