ZXTP2014ZQTA
Diodes Incorporated
Diodes Incorporated
PWR LOW SAT TRANSISTOR SOT89 T&R
$0.39
Available to order
Reference Price (USD)
1+
$0.39483
500+
$0.3908817
1000+
$0.3869334
1500+
$0.3829851
2000+
$0.3790368
2500+
$0.3750885
Exquisite packaging
Discount
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Upgrade your electronic designs with the ZXTP2014ZQTA Bipolar Junction Transistor (BJT) by Diodes Incorporated. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the ZXTP2014ZQTA is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Diodes Incorporated for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 140 V
- Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A
- Current - Collector Cutoff (Max): 20nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
- Power - Max: 1.5 W
- Frequency - Transition: 120MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
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