
Transistors - FETs, MOSFETs - RF
Transistors - FETs, MOSFETs - RF
Definition:
Transistors - FETs (Field-Effect Transistors), MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) - RF (Radio Frequency) are specialized semiconductor devices designed for high-frequency signal amplification and switching in RF applications. These components are optimized for performance in wireless communication, radar systems, satellite technology, and other high-frequency circuits, offering low noise, high gain, and efficient power handling.
Types of Products in This Category:
This classification includes a variety of RF-optimized transistors, such as:
- RF FETs: Designed for low-noise amplification in high-frequency circuits.
- RF MOSFETs: Provide high-power efficiency and thermal stability for RF power amplification.
- LDMOS (Laterally Diffused MOSFETs): Ideal for high-power RF applications like base stations and broadcast systems.
- GaN (Gallium Nitride) FETs/MOSFETs: Deliver superior high-frequency performance and power density for advanced RF systems.
- HEMT (High Electron Mobility Transistors): Used in millimeter-wave and microwave applications due to their high-speed switching capabilities.
Purchasing Recommendations:
When selecting RF FETs or MOSFETs, consider the following factors:
- Frequency Range: Ensure the device supports the required operating frequency (e.g., UHF, VHF, microwave).
- Power Handling: Match the transistor s power rating (e.g., wattage) with your application s demands.
- Noise Figure (NF): Critical for receiver circuits; lower NF ensures better signal clarity.
- Package Type: Choose between surface-mount (SMD) or through-hole based on PCB design requirements.
- Supplier Reliability: Opt for reputable manufacturers (e.g., Infineon, Qorvo, NXP) to ensure consistent performance and longevity.
This category is essential for engineers and designers working on cutting-edge RF systems, where precision, efficiency, and signal integrity are paramount.
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CG2H80120D-GP4
120W GAN HEMT 28V 8.0GHZ DIE, G2
NE3503M04-T2-A
SMALL SIGNAL N-CHANNEL MOSFET
CPH5821-TL-E
PCH+SBD 4V DRIVE SERIES
BLC8G27LS-210PVY
RF FET LDMOS 65V 17DB SOT12513
MWT-7F
MED POWER GAAS MESFET
CGHV27060MP-AMP3
0.8-2.7GHZ, AMP W/ CGHV27060MP
MWT-1F
HIGH GAIN GAAS LIJESFET
MRF6S27085HR3
RF S BAND, N-CHANNEL
BLF8G09LS-270GWJ
RF FET LDMOS 65V 20DB SOT1244C
ARF1501
MOSFET RF N-CH 1000V 30A T1
BLS9G2729LS-350U
RF MOSFET LDMOS 28V SOT502B
2SK3819-DL-E
NCH 4V DRIVE SERIES
BLP05H6350XRGY
RF FET LDMOS 135V 27DB SOT12242
NE3517S03-T1D-A
SMALL SIGNAL N-CHANNEL MOSFET
CGHV27060MP
RF MOSFET HEMT 50V 20TSSOP
MRF8P20165WHSR5
FET RF 2CH 65V 2.01GHZ NI780S4
HIP5010IS
COMPLEMENTARY DRIVE HALF-BRIDGE
SD4933
TRANSISTOR RF MOSFET N-CH M177
BLL6H1214L-250,112
RF FET LDMOS 100V 17DB SOT502A
BF1201WR,115
MOSFET 2N-CH 10V 30MA SOT343R