15GN01MA-TL-E
onsemi
onsemi
RF TRANS NPN 8V 1.5GHZ 3MCP
$0.06
Available to order
Reference Price (USD)
1+
$0.06000
500+
$0.0594
1000+
$0.0588
1500+
$0.0582
2000+
$0.0576
2500+
$0.057
Exquisite packaging
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Discover the 15GN01MA-TL-E, a cutting-edge RF Bipolar Junction Transistor (BJT) from onsemi, part of the Discrete Semiconductor Products family. This transistor is optimized for RF amplification, delivering high linearity and low distortion. Its versatile design suits a wide range of applications, including mobile communication, broadcast systems, and RF test equipment. The 15GN01MA-TL-E features high power gain, excellent thermal performance, and long-term reliability. Whether for commercial or industrial use, this transistor ensures superior performance. Choose onsemi for advanced RF BJT solutions that meet the evolving needs of the electronics industry.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 8V
- Frequency - Transition: 1.5GHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 400mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 5V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, Gull Wing
- Supplier Device Package: 3-MCP
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