15GN03MA-TL-E
onsemi
onsemi
RF TRANS NPN 10V 1.5GHZ 3MCP
$0.35
Available to order
Reference Price (USD)
3,000+
$0.08637
6,000+
$0.08158
15,000+
$0.07438
30,000+
$0.06958
75,000+
$0.06398
Exquisite packaging
Discount
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The 15GN03MA-TL-E RF Bipolar Junction Transistor (BJT) by onsemi is a standout in the Discrete Semiconductor Products category. Tailored for high-frequency applications, this transistor provides outstanding amplification with minimal noise. Its robust design ensures reliability in demanding environments, making it ideal for use in RF transceivers, radar systems, and wireless infrastructure. Key features include high gain bandwidth, excellent thermal resistance, and stable operation. Applications extend to automotive, aerospace, and IoT devices. Trust onsemi for high-performance RF BJTs that drive technological advancement.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 1.5GHz
- Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz
- Gain: 13dB @ 0.4GHz
- Power - Max: 400mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Current - Collector (Ic) (Max): 70mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: 3-MCP
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