2SB1202S-E
onsemi
onsemi
TRANS PNP 50V 3A TP
$0.23
Available to order
Reference Price (USD)
1+
$0.66000
10+
$0.57300
100+
$0.43060
500+
$0.34104
1,000+
$0.26644
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience unmatched performance with the 2SB1202S-E Bipolar Junction Transistor (BJT) by onsemi. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the 2SB1202S-E delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose onsemi for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 3 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
- Power - Max: 1 W
- Frequency - Transition: 150MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package: TP
Related Products
Panjit International Inc.
MMBT2222AW_R1_00001
Fairchild Semiconductor
BC846AMTF
onsemi
NJL4281DG
Sanken
2SB1257
Nexperia USA Inc.
PBSS303ND,115
onsemi
2SD1805F-E
onsemi
2N5401ZL1
NTE Electronics, Inc
NTE102A
Yangzhou Yangjie Electronic Technology Co.,Ltd
S8050-H-F2-0001HF
Microchip Technology