3N163 TO-72 4L
Linear Integrated Systems, Inc.
Linear Integrated Systems, Inc.
P-CHANNEL, SINGLE ENHANCEMENT MO
$9.27
Available to order
Reference Price (USD)
1+
$9.27000
500+
$9.1773
1000+
$9.0846
1500+
$8.9919
2000+
$8.8992
2500+
$8.8065
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the 3N163 TO-72 4L by Linear Integrated Systems, Inc., a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The 3N163 TO-72 4L stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Linear Integrated Systems, Inc..
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 50mA
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V
- Vgs(th) (Max) @ Id: 5V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -6.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3.5 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 375mW
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-72-4
- Package / Case: TO-206AF, TO-72-4 Metal Can
Related Products
Infineon Technologies
IRL520NPBF
Infineon Technologies
BSC0502NSIATMA1
Vishay Siliconix
SUM110P04-04L-E3
STMicroelectronics
STB6N80K5
Nexperia USA Inc.
PMH950UPEH
Infineon Technologies
IPB60R165CPATMA1
Infineon Technologies
IRF2804PBF
Vishay Siliconix
SQJ460AEP-T2_GE3
Vishay Siliconix
SIHG21N60EF-GE3
Infineon Technologies