630AT
Goford Semiconductor
Goford Semiconductor
N200V,RD(MAX)<250M@10V,RD(MAX)<3
$0.95
Available to order
Reference Price (USD)
1+
$0.95000
500+
$0.9405
1000+
$0.931
1500+
$0.9215
2000+
$0.912
2500+
$0.9025
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The 630AT from Goford Semiconductor redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the 630AT offers the precision and reliability you need. Trust Goford Semiconductor to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
Related Products
onsemi
NTD4865N-35G
Infineon Technologies
IPI023NE7N3 G
onsemi
NTE4153NT1G
Infineon Technologies
IPD80R1K4P7ATMA1
Alpha & Omega Semiconductor Inc.
AOU4N60
Microchip Technology
APT1201R5BVFRG
Fairchild Semiconductor
FQB34N20TM
Infineon Technologies
IRFR9024NTRLPBF
Infineon Technologies
BSZ099N06LS5ATMA1
Fairchild Semiconductor