A1P35S12M3
STMicroelectronics
STMicroelectronics
IGBT MOD 1200V 35A 250W ACEPACK1
$56.25
Available to order
Reference Price (USD)
1+
$41.16000
36+
$36.79194
108+
$33.34278
Exquisite packaging
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Optimize your power systems with STMicroelectronics's A1P35S12M3, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The A1P35S12M3 is particularly effective in high-ambient-temperature environments like steel mill drives. STMicroelectronics brings decades of semiconductor expertise to every A1P35S12M3 module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 35 A
- Power - Max: 250 W
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 35A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: 2.154 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: ACEPACK™ 1
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