AIKW30N60CTXKSA1
Infineon Technologies
Infineon Technologies
IC DISCRETE 600V TO247-3
$6.52
Available to order
Reference Price (USD)
1+
$6.42000
10+
$5.81200
240+
$4.83613
720+
$4.17799
1,200+
$3.58793
Exquisite packaging
Discount
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Discover the AIKW30N60CTXKSA1 Single IGBT transistor by Infineon Technologies, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the AIKW30N60CTXKSA1 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the AIKW30N60CTXKSA1 for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
- Power - Max: 187 W
- Switching Energy: 690µJ (on), 770µJ (off)
- Input Type: Standard
- Gate Charge: 167 nC
- Td (on/off) @ 25°C: 23ns/254ns
- Test Condition: 400V, 30A, 10.6Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-41
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