C3M0120065J
Wolfspeed, Inc.
Wolfspeed, Inc.
650V 120M SIC MOSFET
$8.47
Available to order
Reference Price (USD)
1+
$8.47000
500+
$8.3853
1000+
$8.3006
1500+
$8.2159
2000+
$8.1312
2500+
$8.0465
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the C3M0120065J single MOSFET from Wolfspeed, Inc.. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the C3M0120065J combines cutting-edge technology with Wolfspeed, Inc.'s renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
- Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
- Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 15 V
- Vgs (Max): +19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 86W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Related Products
STMicroelectronics
STP6N60M2
Diodes Incorporated
DMTH8001STLW-13
Infineon Technologies
AUIRFS4127TRL
Diodes Incorporated
DMN4035LQ-13
onsemi
FQB19N20CTM
Alpha & Omega Semiconductor Inc.
AOTF290L
Infineon Technologies
IRFI3306GPBF
Diodes Incorporated
DMN2011UFDF-13
Renesas Electronics America Inc
2SK3984-ZK-E1-AY
Rohm Semiconductor