DMN2005K-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 20V 300MA SOT23-3
$0.42
Available to order
Reference Price (USD)
3,000+
$0.18669
6,000+
$0.17591
15,000+
$0.16513
30,000+
$0.15758
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the DMN2005K-7 by Diodes Incorporated, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The DMN2005K-7 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Diodes Incorporated.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.7V
- Rds On (Max) @ Id, Vgs: 1.7Ohm @ 200mA, 2.7V
- Vgs(th) (Max) @ Id: 900mV @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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