DMN2013UFX-7
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 20V 10A 6-DFN
$0.29
Available to order
Reference Price (USD)
3,000+
$0.31413
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic projects with the DMN2013UFX-7 from Diodes Incorporated, a leading option in the Discrete Semiconductor Products market. As a Transistors - FETs, MOSFETs - Arrays device, it provides fast switching speeds and low conduction losses, essential for high-efficiency applications. Ideal for use in server power supplies, battery management systems, and RF amplifiers, the DMN2013UFX-7 ensures top-notch performance. Diodes Incorporated's expertise in semiconductor technology guarantees a product you can rely on.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Rds On (Max) @ Id, Vgs: 11.5mOhm @ 8.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 57.4nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 2607pF @ 10V
- Power - Max: 2.14W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VFDFN Exposed Pad
- Supplier Device Package: W-DFN5020-6
Related Products
Infineon Technologies
DF11MR12W1M1PB11BPSA1
onsemi
NTGD3133PT1G
Alpha & Omega Semiconductor Inc.
AOSD21307
Advanced Linear Devices Inc.
ALD114904ASAL
Vishay Siliconix
SI7252DP-T1-GE3
Diodes Incorporated
DMN61D8LVTQ-7
Panjit International Inc.
PJX8804_R1_00001
Diodes Incorporated
DMC2053UVTQ-13
onsemi
NTHD2102PT1
Rohm Semiconductor