DMN2990UFB-7B
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 20V 780MA 3DFN
$0.05
Available to order
Reference Price (USD)
10,000+
$0.05341
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the DMN2990UFB-7B single MOSFET from Diodes Incorporated. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Diodes Incorporated's DMN2990UFB-7B for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 780mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250A
- Gate Charge (Qg) (Max) @ Vgs: 0.41 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 520mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X1-DFN1006-3
- Package / Case: 3-UFDFN
Related Products
Vishay Siliconix
SISS30LDN-T1-GE3
GeneSiC Semiconductor
G2R1000MT17D
Fairchild Semiconductor
SI4467DY
onsemi
FDS5351
Infineon Technologies
IRFH7932TRPBF
EPC
EPC2070
STMicroelectronics
SCTH100N65G2-7AG
Alpha & Omega Semiconductor Inc.
AOWF12N50
Vishay Siliconix
SQJA68EP-T1_GE3
Rohm Semiconductor