DMP1005UFDF-7
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 12V 26A 6UDFN
$0.59
Available to order
Reference Price (USD)
3,000+
$0.21336
6,000+
$0.20104
15,000+
$0.18872
30,000+
$0.18010
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the DMP1005UFDF-7 single MOSFET from Diodes Incorporated. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the DMP1005UFDF-7 combines cutting-edge technology with Diodes Incorporated's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 8.5mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 2475 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type F)
- Package / Case: 6-UDFN Exposed Pad
Related Products
Infineon Technologies
IPB80N04S2L03ATMA1
STMicroelectronics
STD16N60M2
Infineon Technologies
BSP149L6906HTSA1
Vishay Siliconix
IRFR310TRPBF-BE3
Taiwan Semiconductor Corporation
TSM056NH04LCV RGG
Panjit International Inc.
PJD6N10A_L2_00001
IXYS
IXTP2N100P
NXP USA Inc.
BUK958R5-40E,127
Infineon Technologies
IPAN60R600P7SXKSA1
Vishay Siliconix